Oxygen in Silicon

This volume reviews the latest understanding of the behavior and roles of oxygen in silicon, which will carry the field into the ULSI era from the experimental and theoretical points of view. The fourteen chapters, written by recognized authorities representing industrial and academic institutions, cover thoroughly the oxygen related phenomena from the crystal growth to device fabrication processes, as well as indispensable diagnostic techniques for oxygen.Comprehensive study of the behavior of oxygen in siliconDiscusses silicon crystals for VLSI and ULSI applicationsThorough coverage from crystal growth to device fabricationEdited by technical experts in the fieldWritten by recognized authorities from industrial and academic institutionsUseful to graduate students, scientists in other disciplines, and active participants in the arena of silicon-based microelectronics research297 original line drawings