Kristally Tverdykh Rastvorov GE-Si

V rabote resheny zadachi, svyazannye s polucheniem slozhnolegirovannykh kristallov tvyerdykh rastvorov Ge-Si c zadannym raspredeleniem osnovnykh komponentov i primesey, a takzhe s izucheniem spektra primesnykh sostoyaniy i elektrotransportnykh yavleniy v etikh materialakh. V pfannovskom priblizhenii i v ramkakh modeli virtual'nogo kristalla dlya tvyerdykh rastvorov resheny matematicheskie zadachi raspredeleniya komponentov i primesey v kristallakh binarnykh sistem, vyrashchennykh traditsionnym i modernizirovannym metodami Bridzhmena. Razrabotana metodika vyrashchivaniya kristallov Ge-Si c lineyno rastushchey kontsentratsiey kremniya vdol' osi kristallizatsii. Opredeleny ravnovesnye koeffitsienty segregatsii primesey Al i Sb v sisteme Ge-Si, demonstriruyushchie lineynoe izmenenie etogo parametra s sostavom kristalla mezhdu ikh znacheniyami v Ge i Si. Pokazano, chto matematicheskoe modelirovanie raspredeleniya komponentov i primesey v kristallakh Ge-Si, vypolnennoe v prinyatom v rabote priblizhenii, opredelyaet optimal'nye znacheniya operatsionnykh tekhnologicheskikh parametrov dlya vyrashchivaniya kristallov s zadannym sostavom i kontsentratsiey primesey vdol' osi kristallizatsii.